| 摘要 |
PURPOSE:To prevent sticking phenomena in the stage of removing mask patterns from a photoresist film after exposure in a photoetching stage and to increase the yield of production of semiconductor devices, etc., by providing the mask patterns differing in thickness on glass substrates. CONSTITUTION:In a photomask to be used in a photoetching stage, etc. in the stage of producing semiconductor devices, a photomask 14 formed with the 1st mask patterns 12 of Cr, etc. having about 1,800Angstrom thickness and the 2nd mask patterns 13 of Cr, etc. having about 900Angstrom thickness on a glass substrate 11 is made. Such mask is brought into tight contact with the photoresist coated on a silicon wafer 15 in such a way that the patterns 12 thereof face the dicing lines 16 of the wafer 15 and that the patterns 13 face chips 17. Since the adhesive power of the patterns 13 is weaker than the adhesive power of the patterns 12, the sticking of the photoresist on the mask 14 after exposure and consequent partial stripping thereof are prevented. |
