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发明名称
Verfahren zum Herstellen von dotierten, einkristallinen Halbleiterschichten
摘要
申请公布号
DE1224278(B)
申请公布日期
1966.09.08
申请号
DE1960S082649
申请日期
1960.11.30
申请人
SIEMENS & HALSKE AKTIENGESELLSCHAFT
发明人
ZIEGLER DIPL.-PHYS. DR. GUENTHER;SIRTL DIPL.-CHEM. DR. ERHART
分类号
C23C16/453;H01L21/00
主分类号
C23C16/453
代理机构
代理人
主权项
地址
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