| 摘要 |
PURPOSE:To obtain excellent frequency characteristics by a method wherein the bias junction point for an island region wherein diffused resistors are formed is located at a place other than the circuit whereto the diffused resistors are directly connected. CONSTITUTION:PNP transistors Q5, Q6 constitute a differential amplifying circuit whereinto a current mirror circuit 5 is inserted as an active load to be routed to an output circuit via an emitter-follower circuit constituted of an NPN transistor Q4 and resistor R4. The bias junction point of an island region 4 is connected to a point A' that is the junction point for a resistor R5 and the anode of a diode D1. The diodes D1, D2 being located at a different place separated from a circuit whereto the resistors R1-R4 are directly connected, the original signal does not go through a parasitic capacity C'M generated by the island region 4, which reduces the mirror ball effect and ensures excellent frequency characteristics. |
