| 摘要 |
PURPOSE:To form an Al wiring pattern having high accuracy, and to prevent the accidents of disconnection by removing an extraneous chlorine group gas and bringing an Al film into contact with air when forming Al wiring. CONSTITUTION:The upper surface of a semiconductor substrate onto which a semiconductor element is formed through a sputtering method is coated with Al film, a resist-film pattern is formed, and the substrate is charged into an etching chamber 10. A semiconductor substrate 1 is placed onto a cathode plate 12 and evacuated to vacuum, gas is flowed into the chamber, and the substrate, etc. are etched. The semiconductor substrate is transferred into a load lock chamber 20. A gate valve 31 between the load lock chamber 20 and a heat treatment chamber 30 is opened. |
