| 摘要 |
PURPOSE:To enable the oscillated wavelength of laser light to be variable by a method wherein stripe grooves of depth reaching the first crystal layer are provided on the forth crystal layer, and a plurality of mesa stripe light emitting regions are formed. CONSTITUTION:First, an active layer 23 of fixed composition is formed on a compound semiconductor substrate 21 via a buffer 22. Next, the layer 23 is isolated at fixed intervals by a plurality of the stripe grooves 24 reaching the layer 22. Then, after an active layer 25 of crystal composition different from that of the layer 23 is formed in the grooves 24, a top layer 26 is formed on the layers 23 and 25. Further, a plurality of the mesa stripe light emitting regions 28 and 29 of different characteristics of oscillated wavelength are formed by providing stripe grooves 27 of depth reaching the layer 22 along each boundary line between the layer 23 and the layer 25 from above the layer 26. In this manner, a wavelength variable laser element wherein the oscillated length of laser light can be used by being variable in a wide range can be easily obtained. |
