| 摘要 |
PURPOSE:To prevent the degradation of electric characteristics even when a pin hole is generated in an oxide film by forming an opening to an oxidized insulating layer and forming another insulating layer onto the whole surface. CONSTITUTION:An opening is formed to the silicon oxide film 3 on a semiconductor 2 in order to extract an electrode, and a contact region section is exposed. A pin hole 6 is generated in the silicon oxide film 3 at that time. Another insulating layer (a silicon nitride film) 7 is formed onto the whole surface. Anodic oxidation is executed and the insulating film 7 is changed into a silicon oxide film only in the contact region section, and the silicon oxide film changed is removed through etching. The quality of the insulating film 7 on the pin hole 6 does not change at that time. An aluminum electrode 8 is formed. Accordingly, defective characteristics such as a short circuit are not generated even when the pin hole is formed. |
