发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To suppress corrosion in the thickness direction of Al, and to prevent disconnection positively by interposing a metallic film difficult to be corroded between the thickness direction of Al wiring. CONSTITUTION:Al wiring 15 has an intermediate layer 21 between upper and lower Al layers 19, 20, and the layer 21 is of a corrosion-resisting metal, such as Ti, Ta, W, Mo, etc. which does not corrode even when the metal is in contact with an Au wire 22 connected to an electrode pad 17. The layer 21 is evaporated and formed during the evaporation of the layers 19, 20. According to the constitution, the periphery of the Au wire 22 is exposed by the pad 17 and the corrosion of the Al layer 19 is obstructed by the layer 21 even when the layer 19 corrodes, and the corrosion of the wiring 15 is prevented. Electric resistance hardly increases by Al 20 as a lower layer. When using the Au wire, Ti and Ta particularly constitute a battery together with Au and form a passive film, and have an effect preventing corrosion, but the progress of corrosion can be obviated by the intermediate layer 21 even when using the Al wire according to said constitution.
申请公布号 JPS58192337(A) 申请公布日期 1983.11.09
申请号 JP19820075352 申请日期 1982.05.07
申请人 HITACHI SEISAKUSHO KK 发明人 MIYAMOTO KEIJI;KAWANOBE TOORU
分类号 H01L23/52;H01L21/3205;H01L21/60 主分类号 H01L23/52
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