发明名称 GLASS MASK SUBSTRATE USED FOR PHOTOGRAPHIC PROCESSING OF SEMICONDUCTOR
摘要 PURPOSE:To sharpen a pattern on a wafer, by using quartz glass contg. a specified amt. of titanium oxide. CONSTITUTION:Quartz glass contg. 20-5,000ppm titanium oxide (TiO2) is used as the glass mask substrate. It absorbs most of far UV rays of <=220nm wavelengths, resulting in exposing the wafer to 220-300nm wavelength light. Since the wavelength region ranging over the far UV rays is narrowed, the pattern formed on the wafer is made sharper.
申请公布号 JPS58200237(A) 申请公布日期 1983.11.21
申请号 JP19820082452 申请日期 1982.05.18
申请人 TOSHIBA CERAMICS KK 发明人 SAKIKUBO KUNIHIKO;HORIKOSHI TOSHIO;GOROU FUMIO
分类号 G03F1/60;H01L21/027 主分类号 G03F1/60
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