发明名称 MANUFACTURE OF SEMICONDUCTOR TYPE PRESSURE SENSOR
摘要 PURPOSE:To perform brazing in arbitrary forms and sizes, by depositing metal layers and tin layers alternately on one end surface of a seat and a dynamic pressure tube, depositing metal layers, which are readily made to wet with said laminated layers or a gold and tin alloy, on the other end surface, and cooling both layers after they are contacted and heated. CONSTITUTION:Multiple evaporated layers 22, wherein Au and Sn are alternately evaporated, formed on evaporated layers 21 of Cr, Pt, and the like on the end surface of the peripheral part of a pressure sensitive chip 1. At the same time, evaporated layers 23 of Cr, Pt, and the like are provided on the upper and lower end surfaces of a seat 2 in advance. Multiple evaporated layers 24 are formed by the same way for the evaporated layers 22 on the chip 1. A plated layer 13 of Ni, Au, and the like is deposited on a dynamic pressure tube 3. On the end surface to be bonded of the seat 2, at first a Cr layer 31, a Pt layer 32, and an Au layer 33 are sequentially evaporated. Then, Sn layers 34 and Au layers 35 are alternately evaporated. Thus multiple evaporated layers 34 are formed. Said end surface layers, the dynamic pressure tube 3, the seat 2, and the chip 1 are stacked one upon another and heat-treated at 280 deg.C or more. Thereafter they are cooled and an Au-Sn brazing filler alloy is obtained.
申请公布号 JPS58219428(A) 申请公布日期 1983.12.20
申请号 JP19820103434 申请日期 1982.06.16
申请人 FUJI DENKI SEIZO KK;FUJI DENKI SOUGOU KENKYUSHO:KK 发明人 MIURA SHIYUNJI;KIBUNE FUKASHI;TAKAHAMA TEIZOU
分类号 G01L9/04;G01L9/00 主分类号 G01L9/04
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