| 摘要 |
PURPOSE:To provide a highly efficient photoelectric transducer device, by forming a-Si including oxygen atoms in the first doping layer which is to be formed on ITO (Indium Tin Oxide) or SnO2, thereafter forming the same conductive type a-Si, which does not include oxygen. CONSTITUTION:The concentration of B2H6, which is used for obtaining a P type by 20% SiH4 that is dilluted by an H2 base, is made to be 0.05-1% with respect SiH4. O2 is made to be 2-10vol% with respect to SiH4. This gas is made to act on a substrate at a temperature of 200 deg.C, and a P type a-Si layer with a thickness of 50Angstrom is formed. At this time, suppression effect of SiO or SiO2 is made conspicuous by mixing oxygen, and the increase in series resistance can be prevented when a solar battery is manufactured. The thickness of ordinary P type a-Si 10, in which oxygen atoms are not introduced, is 50Angstrom . The sum of the P type layer is 100Angstrom . In this way, the light absorbing loss is made to be about a half in comparison with the case only the ordinary P type a-Si is used. The P-I interface is not different from the ordinary element. The resistance can be made smaller than a single oxygen doped P type a-Si. The increase in the series resistance can be avoided. |
