| 摘要 |
PURPOSE:To enable to contain a condenser of large capacity by covering the back surface of a pellet with an insulating film, and sealing the pellet in a case in this state, thereby increasing thermal strain and electric stability. CONSTITUTION:A silicon nitrided film (Si3N4)102 is formed on a silicon substrate 101, selectively etched, and boron is doped by ion implantation. Then, it is oxidized to form a field oxidized film 103 and a channel stopper 104 under the film. A gate oxidized film 106 and then source 107 and drain 108 are formed on the silicon exposed surface, from which the film 102 is removed, and metal wirings 109 are formed on the respective regions. The oxidized film on the back surface is removed, an oxidized film 110 is formed by vapor growth in the desired thickness, and a semiconductor element in which the back surface of the pellet is covered with the insulating film is obtained. Then, metal is adhered to the entire back surface to form electrodes, and a thick metal 113 is formed thereon, thereby obtaining a semiconductor element in which a condenser is formed on the back surface of the pellet. |
