| 摘要 |
PURPOSE:To contrive to improve the sensitivity of Hall elements, remove a yoke which becomes the hindrance in the assembling, improve the moisture resistance of a compound semiconductor material layer, and prevent the increase of unbalance voltage due to piezo resistance effect generated from the strain of the mold resin by a method wherein the compound semiconductor material layer deposited by vapor on a substrate is coated with a soft resin layer wherein the powder of a ferromagnetic substance is mixed and then sealed with the hard mold resin. CONSTITUTION:As the substrate 11, a ferromagnetic substance such as ferrite or a non magnetic substance such as silicon is used; as the compound semiconductor material layer 12, InSb, GaAs, etc. that has a large mobility and Hall coefficient is used. Leads 13 are connected to both ends of the compound semiconductor layer 12 by bonding fine wires by nail head bonding method by using a punched frame of a metallic plate. As the soft resin layer 14, water repellent Si resin is used, and the powder of the ferromagnetic substance such as ferrite or permalloy is mixed into this resin layer 14. Epoxy resin is used as the hard resin layer 15, and the entire body is molded by transfer mold method. |
