| 摘要 |
PURPOSE:To shorten etching time by a method wherein an angle which one side in the longitudinal direction of a beam makes between a reference side is formed as an obtuse angle, with the supporting reference side in the direction of <110> on a substrate whose surface is the plane (100). CONSTITUTION:The Si substrate whose surface is the plane (100) is coated with an SiO2 film 4, further a metal is vapor-deposited, thereafter a metallic electrode of a fixed pattern is formed, and then the SiO2 film 4 is partially removed by etching. The pattern of the film 4 includes the beam pattern 6, and the supporting reference side 8 therefor is set in the direction of <110> of the Si substrate. Both side 6a and 6b of the beam pattern 6 are so set as to be in parallel, and the angle which the side 6a makes between the supporting reference side 8 to be an obtuse angle. This manner enables to shorten the etching time, and accordingly the shape accuracy and the working accuracy of the beam improved. |
