PROCESS FOR PREPARING HOMOGENEOUS FILMS OF HG1-XCDXTE,申请号DE19813162193-传众专利搜索

发明名称	PROCESS FOR PREPARING HOMOGENEOUS FILMS OF HG1-XCDXTE
摘要	Process for obtaining a homogeneous layer of composition Hg1-xCdxTe, comprising the steps of: subjecting a wafer formed by a layer of Hg1-xoCdxoTe deposited by epitaxial growth on a CdTe substrate, xo being less than the desired value x, to a melting treatment, then rapidly cooling the wafer.
申请公布号	DE3162193(D1)	申请公布日期	1984.03.22
申请号	DE19813162193	申请日期	1981.02.18
申请人	SOCIETE ANONYME DE TELECOMMUNICATIONS	发明人	DURAND, ALAIN
分类号	C01B19/04;C30B11/00;C30B19/00;C30B23/02;C30B29/48;H01L21/363;H01L21/365;H01L29/221;H01L31/0296;H01L31/18	主分类号	C01B19/04
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