MOS/bipolar integrated circuit device and manufacturing method thereof.

摘要

In a MOS/bipolar integrated circuit device using junction bipolar transistors (Q2) as active elements for directly controlling a large current, and metal oxide semiconductor field effect transistors or MOSFETs (Q1) as active elements for controlling the operation of the bipolar transistor (Q2), all of the MOSFETs (Q1) included in the circuit are simultaneously formed on a single-crystalline silicon substrate (10). The bipolar transistors (Q2) are stacked above the MOSFETs (Q1) through an SiO2 film (26) having a drain contact hole (28), in a two-story manner. The bipolar transistors (Q2) have their base regions connected to the drains of the MOSFETs (Q1), respectively.