| 摘要 |
PURPOSE:To prevent breaking through and obtain smooth electrode wiring by providing electrode wiring after making shallow the window by selectively forming the epitaxial growth layer within the electrode window. CONSTITUTION:An epitaxial layer 5 is selectively formed on a diffusion layer 3 within an electrode window of an insulating film 2, an impurity of the same conductivity type as the layer 3 is doped into the layer 5 with a high concentration, and thereafter an electrode wiring 4 is conducted. Since the layer 5 of the same conductivity type exists within the window, depth of diffusion substantially increases, a degree of margin for the breaking through also increases at the time of forming the electrode wiring 4 and simultaneously a degree of stepped portion is reduced, thereby, smooth wiring can be obtained. The layer 5 becomes a single crystal having a low resistance resulting in any problem. |
