| 摘要 |
PURPOSE:To improve conversion efficiency, and to reduce the variance of the efficiency by interposing a film mainly comprising one kind or more platinum, niobium, palladium and rhodium between a-Si:H or a-SiC:H of an a-Si semiconductor layer and a transparent conductive film or a light-shielding conductive substrate. CONSTITUTION:The film 9 mainly comprising one kind or more of platinum, niobium, palladium and rhodium is interposed between the transparent conductive film 20 of the solar cell in which the transparent conductive film 20 and the a-Si semiconductor layer 60, in which P type, I-type and N type each layer 30, 40, 50 satisifies a-Si:H or at least one of the P type and N type layers satisfies a-SiC:H and the I-type layer 40 satisifies a-Si:H, are formed on a light-transmitting insulating substrate 10 and a-Si:H or a-SiC:H 30. Or the film 9 the same as mentioned above is interposed between the light-shielding conductive substrate 13 of the solar cell, in which an a-Si semiconductor layer 61 the same as mentioned above and the transparent conductive film 20 are formed, and the transparent conductive film 20 or said semiconductor layer 60 on the light-shielding conductive substrate 13. |
