| 摘要 |
PURPOSE:To obtain an LED with less amount of internal heat generation due to reactive current by a method wherein a ring form groove reaching a P-N junction surface is provided in the periphery of an electrode part adjacent to a light emitting part, and then covered with an insulation layer. CONSTITUTION:A Te doped P-type AlGaAs active layer 15 and a Ge doped P- type AlGaAs 16. The layers 14 and 15 are mesa-etched in ring form by using a resist mask, and a CVDSiO2 13 is formed on an exposed surface and selected to the film thickness d=lambda/2n. The symbol lambda is light wavelength, and n is the refractive index of the film 13. The SiO2 13 in the ring form is removed by etching, an electrode 11 is formed by successively evaporating TiPt, and an Au-plated heat dissipating plate 19 is attached. An AuGe-Au ring form electrode 17 is laid on the N-layer 16. By this constitution, the active layer 15 does not generate photo leakage to the side surface in the presence of the insulation film 13 of the thickness (d), a current flows nearly vertically from the electrode to the electrod 17, the reactive current reduces, the amount of internal heat generation decreases, and the reliability improves. |
