| 摘要 |
PURPOSE:To contrive the improvement of sensitivity of an image sensor by obtaining good ohmic contact by superposing hydrogenated amorphous Si on a clear electrode on a glass substrate via N<+> hydrogenated amorphous Si. CONSTITUTION:An ITO electrode 11 is provided on the glass plate 10, and an a- Si:H film 13 and an ohmic electrode 14 are laminated via the N<+> hydrogenated amorphous Si (a-Si:H) film 12. This constitution enables to obtain the good ohmic contact between the ITO electrode 11 and the a-Si:H film 13, smoothly conduct photo carriers excited by light, and obtain a high sensitivity characteristic. |
