| 摘要 |
PURPOSE:To enable to reduce the process of IC manufacture by a method wherein ions are implanted in the wafer on which a photoresist pattern is formed, and then said photoresist is removed by performing a plasma ashing using excited oxygen. CONSTITUTION:An ion-implanting chamber 1 and a photoresist-removing chamber 2 are coupled through the intermediary of a gate valve 3. Said ion-implanting chamber 1 is maintained at 10<-6>Torr or thereabout by performing an evacuation from an exhaust tube 4 in the direction as shown by arrows in the diagram, and the photoresist-removing chamber 2 is maintained at 0.1Torr or thereabout by performing an evacuation from an exhaust tube 5 in the direction as shown by arrows in the diagram using a rotary pump. In the ion-implanting chamber 1, ion-implantation is performed on the wafer 6 whereon a desired a desired photoresist pattern was formed in the preceding process, and the control of the threshold voltage of the transistor region formed on the wafer can be accomplished. Then, the wafer 6 is moved to the photoresist removing chamber 2, and after the photoresist has been removed by supplying high frequency- excited oxygen and the like into the photoresist removing chamber 2, the wafer is picked out from the chamber for performance of the next process. |
