| 摘要 |
PURPOSE:To obtain a minute polyimide group resin film the same as a mask pattern on a semiconductor substrate by a method wherein a polyimide group resin film is applied on the substrate, and thermally treated, an ion implantation- resisting film patterned is formed on the resin film, ions are implanted selectively to the resin film while using the ion implantation-resisting film as a mask and a region not implanted is removed. CONSTITUTION:The Si substrate 11 is coated with a SiO2 film 12, a polyimide solution is applied on the film 12 through a spin coating method, and three step heat treatment of drying for thirty min at 150 deg.C, imide cyclization heat treatment for sixty min at 200 deg.C and final imide cyclization heat treatment for thirty min at 400 deg.C is executed to the film 12 and the polyimide solution in a N2 atmosphere, thus forming the polyimide resin film 13. The surface is roughened, the ion implantation-resisting mask consisting of a pure Al film 14 is formed at the central section, Ar ions, etc. are implanted, and the film 13 is changed into the improved polyimide resin film 13a. The film 14 is removed, the unimproved film 13 exposed under the film 14 is removed by using a hydrazine hydrate etching liquid, and the minute pattern film 13a is obtained. |
