| 摘要 |
PURPOSE:To obtain the titled film having 0 or very small residual potential and small dark decay during exposure by forming an Se vapor-deposited film contg. a specified amt. of oxygen on a substrate. CONSTITUTION:Selenium having 6 nine purity and a specified amt. of SeO2 are mixed and vacuum evaporation-deposited on a substrate at 250-350 deg.C evaporation source temp. and 55-70 deg.C substrate temp., at 10<-5>-10<-6>Torr vacuum, for 60-130min, or Se contg. oxygen obtained by introducing oxygen in a vacuum distillation step for purifying the material Se in about 10<-2>Torr vacuum to oxidize a part of Se to SeO2 is deposited to the substrate. As a result, the obtained Se vapor-deposited film contains 10-50ppm oxygen and used for an electrophotographic sensitive body. |
