| 摘要 |
PURPOSE:To obtain an Si semiconductor in which silicon atoms and fluorine atoms are bonded with each other, and having superior ultraviolet rays deterioration resisance by a method wherein a cathode consisting of metal In and a substrate electrode are arranged mutually facing in a reaction chamber, raw material gas containing silicon tetrafluoride and sputtering gas are supplied thereto, and glow discharge is generated between the cathode and the substrate electrode. CONSTITUTION:When a cathode and a substrate electrode are to be arranged mutually facing in a reaction chamber, and glow discharge is to be generated under existence of raw material gas containing silicon tetrafluoride and sputtering gas, metal indium not only acts as an electrode simply, but also enabled to be mixed with Si, and to be doped in evaporated Si is used as a cathode. Moreover for the substrate electrode, a stainless steel, quartz glass, etc. are used, while when quartz glass is to be used, a supporting base is constructed of an electric conductor. Then as an applying electric field to generate glow discharge, several hundreds - thousand volts is used, while as an electric power source, any of DC or AC is favorable. Accordingly, a semiconductor film is generated at the film forming speed of 50-200Angstrom . |
