| 摘要 |
<p>PURPOSE:To produce uniformly thin films having good quality at a relatively high speed with high performance by forming an epitaxial thin film of an atom layer then laminating a thicker film therefon under low pressure. CONSTITUTION:A vessel 14 for effective epitaxial growth of an atomic layer is provided in a vacuum vessel 15. Vapors of Zn and S are supplied from evaporating sources 11, 12 under control with solenoid valves respectively to form an epitaxial thin film 9 of an atom layer to a film thickness of several molecular layers or above on the surface of a substrate or the thin film 8 formed on the substrate. The inside of the vessel 14 is always kept in a high degree of vacuum. The thin films 8, 9 are then moved to a vessel 15 having the degree of vacuum degree lower than said degree in the vessel 14 via, for example, a shutter part 16, and a film of ZnS:Mn is formed from, for example, an electron beam emitting source 13 to the thickness larger than the film 9, for example, about 0.5mu. A vacuum deposition, sputtering, CVD or MBE method is usable as a method for laminating said films.</p> |
