| 摘要 |
PURPOSE:To form a surface light emitting semiconductor laser having small current necessary for oscillation by providing a P type semiconductor, a light emitting unit and an N type semiconductor unit in a direction parallel to the substrate. CONSTITUTION:After a light emitting unit 11 is formed on a semi-insulating substrate 16, a P type semiconductor 14, a current blocking unit 19 and an N type semiconductor 15 are formed on the top of the substrate 16 and the unit 11. When thus formed, a surface light emitting semiconductor laser having small current necessary for oscillation can be obtained. |
