发明名称 FLAT SEMICONDUCTOR STACK
摘要 <p>PURPOSE:T enable to endure agains the specification of a high voltage without altering the structure of a cooling piece or a clamping member by oppositely disposing the same polarity sides of flat semiconductor elements connected in series through insulating spacers. CONSTITUTION:The cathode sides of flat semiconductor elements 1, 2 are opposed through conductors 13, 14 to an insulating spacer 12, cooling pieces 4, 5 are disposed at the anode side, clamped by a clamping member 6 to form an integrated stack. A current passage is formed in order of a conductor 8a cooling piece 4 flat conductor element 1 conductor 13 connecting conductor 15 cooling piece 15 flat semiconductor element 2 conductor 4. Thus, when a voltage E2 is applied, for example, between the conductor 14 and the conductor 8a, the voltage applied between the member 6 and the piece 4 is 1/2 of the E2, and the specification of the double voltage can be applied with this without altering the structure of the cooling pieces and the clamping member.</p>
申请公布号 JPS59188157(A) 申请公布日期 1984.10.25
申请号 JP19830060984 申请日期 1983.04.08
申请人 HITACHI SEISAKUSHO KK 发明人 ITAHANA HIROSHI;FUJISAWA TAKAHIRO
分类号 H01L25/11 主分类号 H01L25/11
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