| 摘要 |
PURPOSE:To increase the area of a drain area and to obtain a large signal output by providing plurally the 1st gate area of an electrostatic induction transistor (TR) and one main electrode surface on the same surface side and arranging tnem alternately. CONSTITUTION:To control a current flowing between both electrode area 3, 3, namely, one main electrode area 3 and the other main electrode area 3 of the same conduction type opposing via channel area 2 formed of high-resistance semiconductors, the 1st and the 2nd gate areas 7 of the other conduction type are provided in contact with the area 2. Then, plural control gates 3 and drains 3 are provided alternately in the plane encircled with a shielding gate 5 and the gates 7 are connected on picture element cells. |
