| 摘要 |
<p>Light emitting semiconductor structure consisting of a thin active layer(1), which layer at the underside passes to a further or not structured doped layer(2) in direct contact with a first electrode(4), and which layer at the upperside passes into a further or not structured oppositely doped layer(3), in direct contact with a second electrode(5). Said upper layer comprises an inside barrier(6) of which the permeability for carriers depends on the voltage applied to a third electrode(7) which third electrode is positioned on the outside of said upper layer in the proximity of said second electrode.</p> |
