PREPARATION OF FINE PATTERN

摘要

PURPOSE:To prepare a fine pattern using a photosensitive compsn. causing less daily change of viscosity by irradiating a material coated with the specified photosensitive compsn. with ultraviolet rays and etching the irradiated compsn. using a resist pattern obtd. by the development as a mask. CONSTITUTION:A photosensitive compsn. is obtd. by admixing 5-100wt% (basing on the weight of polymer soluble in aq. alkali and having >=500mol.wt. but becomes insoluble in the aq. alkali by hardening photochemically, e.g. phenol movolak resin) of 4'-azidobenzal-2-methoxyacetophenone expressed by the formula with said polymer. The compsn. is then coated on a material (e.g. silicon wafer) for forming a fine pattern and dried at <=150 deg.C, and irradiated with 1- 1,000mJ/m<2> ultraviolet rays on the desired parts to reduce the solubility in aq. alkali of the irradiated parts. The unirradiated parts are then removed with aq. alkali having <=5wt% concn. to form a resist pattern. Etching is performed using said resist pattern as a mask.