| 摘要 |
PURPOSE:To speed up the titled device by a method wherein each of an element isolation region-emitter-graft base is formed in self-alignment. CONSTITUTION:With an Si nitride film 10 as a mask, an oxide film 11 is formed on the surface of a semiconductor base material 6. Next, the film 10 at parts 102, 104 and an Si oxide film 12 are removed by etching with a resist layer 13 as a mask, and grooves 14 are formed with the layer 13 and the oxide film 11 as a mask. After removing the layer 13, an oxide film 15 is formed, and the graft base 16 and a channel stopper 17 are formed at the same time. Then, an Si nitride film 18 and an insulating material layer 19 are successively deposited after removing the layer 10. A collector contact region 21 is formed with the above-mentioned resist layer 20 as a mask. The resist layer 20 is removed, and an intrinsic base 22 and a base contact region 23 are formed, thereafter a resist layer 24 and an emitter 25 are formed. Finally, the emitter electrode 26, base electrode 27, collector electrode 28, and wiring are formed. |
