| 摘要 |
PURPOSE:To enable to manufacture a selective epitaxially grown substrate having flat surface by a method wherein a polycrystalline silicon is inserted as a buffer layer between an insulating film and epitaxially grown silicon. CONSTITUTION:An insulating film 2 is partially provided on a silicon substrate 1, and polycrystalline silicon 13 is coated on the side wall of said insulating film only. When an epitaxial silicon layer 4 is selectively grown on the exposed surface 3 of the silicon substrate, a very flat surface having no irregularity of facet in the vicinity of the interface of the insulating film can be obtained. The polycrystalline silicon is to be formed in the thickness within 500-800Angstrom . |
