| 摘要 |
PURPOSE:To manufacture a planar structure IC, in which a LD and a driving element for the LD are arranged vertically, and to increase density and the degree of integration by vertically disposing a bipolar transistor to the LD, sharing a collector layer in the bipolar transistor together with the LD and controlling the LD as collector load by collector currents. CONSTITUTION:An InGaAsP four-element layer (an active layer) 302 is grown on an N type InP substrate 301 in an epitaxial manner. A P type InP layer 303 called a P clad layer, an N type InP layer(anactive base layer) 304 and a P type InP layer (an emitter layer) 305 are grown on the active layer 302 in succession in an epitaxial manner. The epitaxial layer is etched selectively and left rectilinearly. An N type InP layer 307 is grown in the epitaxial manner in succession. Buried epitaxial growth is controlled so that the height of a P type InP layer 306 does not exceed the active base layer 304. The growth is controlled so that the N type InP layer 307 and the active base layer 304 are connected. An insulating film 311 is formed on the whole surface and openings are bored selectively, and resistive electrodes 308, 309 are formed. A resistive electrode 310 is also shaped on the whole surface in the N type InP substrate 301. |
