| 摘要 |
PURPOSE:To produce a pressure sensitive silicon chip with excellent linearlity of resistance variation against pressure and less hysteresis of offset voltage by a method wherein a silicon substrate is provided with super sonic processing as well as processing of strongacid base etching solution. CONSTITUTION:A silicon substrate 30 with relatively high thickness 31 of 300- 400mum is provided with supersonic processing to attain specified diaphragm thickness + approximate 50mum as the primary layer 35 caused by the primary processing making use of the supersonic is removed by etching process using solution mixed with HF and strong acid of HNO3 and utilizing an oxide film 34 as a mask. At the same time, the substrate 30 is provided with the secondary processing precisely controlling it to attain the specified diaphragm thickness 32 producing a specified product. |
