| 摘要 |
The invention relates to a tunnel junction consisting of the association of an n layer and a p layer which are produced by doping with mixed galium aluminium arsenide of the type Ga1-xAlxAs, x representing the molar fraction of aluminium arsenide. According to the invention, the value of x is greater than or equal to 0.6 for the alloy constituting the n layer and greater than or equal to 0.4 for the alloy constituting the p layer. Preferably, each of the layers n and p is less than or equal to 0.1 microns thick. The invention may be applied for example to the manufacture of multistage photovoltaic cells, to the microwave sector or in optoelectronic devices. <IMAGE>
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