| 摘要 |
PURPOSE:To enable to activate an ion-implanted layer in the state wherein a metal such as Al having no heat-resisting property is attached by a method wherein the electromagnetic wave energy emitted from light source is effectively absorbed into a selective injection layer only. CONSTITUTION:An N type semiconductor layer 2 formed by performing an ion- implantation and an annealing is provided on the surface of a semi-insulative GaAs substrate 1, an SiO2 film 3 of 800Angstrom in thickness is provided thereon, and a photoresist pattern 4 is provided on the film 3. Then, after a selective etching has been performed on the SiO2 film 3, an Al film 5 which is Schottky gate metal is vapor-deposited on the whole surface of the substrate. Subsequently, a gate electrode 11 is formed by performing a lift-off method, and Si<+> ions 6 are implanted for the purpose of forming a high density semiconductor layer (N<+> layer) 7 using the gate electrode 11 as a mask. Then, the homogeneous light 8 of wavelength 6,328Angstrom is made to irradiate from above. Besides, a thin film having a specific inductive capacity epsilonr of 1<epsilonr<=120pi/Zl (provided that Zl is the electromagnetic wave impedance of substrate) and the optical path of 1/4 wavelength, is formed on the whole surface of the substrate. |
