| 摘要 |
PURPOSE:To prevent generation of recombination of the minority carrier in the vicinity of surface region as well as to prevent reduction in current gain by a method wherein a high density layer of the conductive type same as that of a base region is formed in the vicinity of the surface of a protruded region. CONSTITUTION:A photoresist film 17 is applied, and a patterning is performed on the are which is a little wider than a protruded region. Then, photoresist 18 is applied. Subsequently, photoresist is etched in O2 gas, and the photoresist etching is stopped when the polycrystalline silicon film 7 of the protruded region is exposed. Then, when the polycrystalline silicon film 7 is removed by performing an anisotropic etching method, the polycrystalline silicon film 7 on the upper surface only of the protruded region is removed, and a silicon oxide film 14 is exposed. Then, the oxide film 14 is removed, and an electrode lead out region is formed by performing a patterning on the polycrystalline silicon film 7 in such a manner that vertical and horizontal transistors are included. Subsequently, an insulating film 8 is formed by oxidation, and a nitride film is removed, and a high density base region 10 is formed by performing an ion implantation, for example. Then, a nitride film 19 to be used for passivation is deposited, an aperture is provided on a lead-out electrode, and a lead-out region 5 is formed by adding impurities. |
