| 摘要 |
PURPOSE:To readily perform a resistance element having high reliability and stable performance in a small area by directly coupling the channel region of an MOS transistor and a polysilicon substrate via an ohmic electrode. CONSTITUTION:A low density N type polysilicon film 15 is formed, high density boron ions are selectively implanted, and a P type diffused layer 16 which is a drain of a load MOS transistor and also becomes a power line is formed. Then, after a gate oxidized film 17 is formed, a phosphorus-doped polysilicon is grown and selectively removed to form a gate electrode 18, and an oxidized film 19 is then formed. Then, a hole 18a is formed, and an oxidized film is etched. At this time, only the bottom of the hole 18a is etched at the oxidized film to expose the polysilicon surface. Arsenic and boron ions are implanted from reverse direction, borons are doped to the region 21 to form a P type region, arsenic is doped to the region 22 to form an N type region. Then, an ohmic electrode 23 is formed thereon. |
