发明名称 |
Independently variably controlled pulsed R.F. plasma chemical vapor processing |
摘要 |
Semiconductive wafers are processed, i.e., etched or layers deposited thereon, by means of a plasma enhanced chemical vapor processing system wherein the plasma is generated by a train of R.F. power pulses. The pulse repetition rate, pulse length and peak power level of the individual pulses are independently variably controlled to variably control the uniformity of the processing of the semiconductive wafers within the processing gaps.
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申请公布号 |
US4500563(A) |
申请公布日期 |
1985.02.19 |
申请号 |
US19820434859 |
申请日期 |
1982.12.15 |
申请人 |
PACIFIC WESTERN SYSTEMS, INC. |
发明人 |
ELLENBERGER, CHARLES E.;BOWER, GEORGE L.;SNOW, WILLIAM R. |
分类号 |
C23C16/515;H01J37/32;(IPC1-7):C23C13/08;H01L21/306 |
主分类号 |
C23C16/515 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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