| 摘要 |
PURPOSE:To obtain a P type semiconductor having a wide forbidden band width by a method wherein at least two kinds of a first solid layer, wherein P type impurities have been contained, and second solid layer, whose sum of the electron affinity and the forbidden band width is larger than that of the first solid layer, are alternately laminated. CONSTITUTION:A firt solid layer 4, which has contained P type impurities 2 and has a thickness less than the hole wavelength, and a second solid layer 5, whose sum of the electron affinity and the forbidden band width is larger than that of the first solid layer 4 and which has a thickness so thick that holes in the first solid layer 4 can be tunnelled through the layer 5, are formed on a semiconductor substrate 1. Moreover, the super lattice is constituted in a structure, wherein the first solid layer 4 and the second solid layer 5 have been alternately laminated. |
