| 摘要 |
PURPOSE:To perform the addition of hydrogen or halogen elements by a method wherein electric energy is applied to hydride or halogenide of the element composing a non-single crystal semiconductor to cause excitation, decomposition or reaction and reaction products are produced at the temperature sufficiently lower than a room temperature. CONSTITUTION:Substrates 1 are stood together for a port 2 and are enclosed in a reactor 3. High-frequency energy 4 is applied to the reactor 3 and it is cooled by a cooling device 5 to -70 deg.C- the temperature of liquid nitrogen which is sufficiently lower than a room temperature. A reactive gas is mixed in an excitation container 7 and is introduced into the reactor 3 after being activiated, decomposed or caused reaction chemically by high-frequency energy 10 or microwave energy. Thus, the addition of hydrogen or halogen elements to the mixture semiconductor of silicon, hydrocarbon, germanium or SixC1-x (0.5<x<1), SixGe1-x (0<x<1), SixSn1-x (0<x<1) of them can be formed by using hydride or halogenide of the element composing said semiconductor. |
