| 摘要 |
PURPOSE:To prevent etching of a polycrystalline Si fuse and a damage at etching of an insulating film by a stopper film and to form good fuse apertures easily by forming an insulating film after forming the stopper film of an Al film on the polycrystalline Si fuse. CONSTITUTION:After a PSG film of a source region 15 and etc. is removed to form a contact hole 22, an Al film 23 is formed over the whole surface and it is patterned to compose an Al wiring 23A. At this time, on a fuse 14, the Al film 23 corresponding to the parts of fuse apertures is left and a P-SiO film 24 is formed. The fuse apertures are formed on the P-SiO film 24 by using a photoresist film 25 as a mask. The P-SiO film 24 is selectively etched by dry etching. At this time, the Al film 23 of a lower layer functions as a stopper film and it prevents etching of each of the films of the lower layer. |
