| 摘要 |
PURPOSE:To form the angle of an etching surface in the end section of a resin film at the low angle of inclination and easily by forming an inclined plane to the end section of a photo-resist pattern and transferring the inclined plane of the photo-resist pattern to the resin film through plasma etching. CONSTITUTION:A polyimide resin film 4 is applied and formed on an SiO2 film 3 and a conductor pattern. A positive type photo-resist is applied, a positive type photo-resist film 5 is shaped, and a photo-resist pattern is formed through proximity exposure. The angle of inclination theta1 of an end surface takes approximately 80 deg. at that time. The whole is baked at the softening temperature or higher of the photo-resist. Consequently, a resist-reflow is generated in the photo-resist film 5, and the film 5 is fluidized and the angle of inclination theta2 takes approximately 25 deg.. When the baked wafer is etched by using a plasma etching device, the angle of inclination theta3 of the end surface of the photo-resist film 5 takes approximately 25 deg., and the angle of inclination theta4 of the end surface of the polyimide resin film 4 takes approximately 20 deg.. The wafer is dipped in acetone, and the photo- resist film 5 is removed. |
