| 摘要 |
PURPOSE:To obtain a reference voltage circuit of a configuration adapted for integrating the circuit which can reduce the irregularity of a threshold voltage, generate a stable reference voltage for temperatures and form on the same semiconductor substrate. CONSTITUTION:A reference voltage VR generated between a reference terminal 1 and an output terminal 2 becomes the sum of a forward voltage VBE between the base and the emitter of a transistor 11 generated by a current determined by a current source circuit formed of MOSFETs 7-10 and a resistor 6 and a voltage generated between both ends of a resistor 12. The sizes of the MOSFETs are set so as to operate the MOSFETs 7, 8 in a weak inversion layer range to decide a current I1 flowed to the resistor 6 and the MOSFETs 7, 9 and a current I2 flowed to the MOSFETs 8, 10, and the reference voltage VR is decided by the foward voltage between the base and the emitter of the transistor 11 and the relative ratio of the resistors 1, 12 and the relative ratio of the size ratio of the MOSFETs 7 to 10. Since the circuit is formed on the same semiconductor substrate, the relative ratio of the resistors 6, 12 and the relative ratio of the sizes of the elements can be accurate, and accurate value can be obtained as compared with the conventional reference voltage. |
