| 摘要 |
PURPOSE:To obtain the fine conductor layer which is not damaged even under the environmental conditions of circumference during succeeding manufacturing processes by forming the conductor pattern by two-layer structure of an usual thick-film pattern and a metallo-organic pattern. CONSTITUTION:A thick-film pattern 2 is formed on an alumina substrate 1 and a metallo-organic gold pattern 3 having the same pattern is formed to form a drive circuit A consisting of a thick-film circuit. After a chrominum thin film is deposited on the glazed part 4 on the alumina substrate 1 by vapor deposition, a chromium electrode 5 of the predetermined shape is patterned as a lower electrode and an amorphous hydrogenated silicon layer 6 is deposited as a photoconductor layer by plasma CVD. A plate member 7 used as a mask at that time is removed, after which an indium tin oxide electrode 8 is formed as an upper electrode through a metallic mask of the predetermined shape and the drive circuit A and a sensor are connected by wire bonding thereby completing the tight- contact type image sensor. |
