| 摘要 |
PURPOSE:To form a gate electrode having low resistance and the high melting point stably by shaping the gate electrode by a Nb single layer film or a multilayer film consisting of Nb and Si. CONSTITUTION:A field oxide film 2, a gate insulating film 3 and source and drain diffusion layers 5, 6 are formed to the surface of an Si substrate 1, and a Nb gate electrode 4 is formed on the gate insulating film 3. A field oxide film 12, a gate insulating film 13 and source and drain diffusion regions 16, 17 are shaped on an Si substrate 11, and a gate electrode consisting of two layers of a polycrystalline Si film 14 and a Nb film 15 is formed on the gate insulating film 13. |
