| 摘要 |
PURPOSE:To control the speed of oxidation as well as to enable to select separately and independently the condition of thermal diffusion of impurities and the condition of oxidation speed of a semiconductor element by a method wherein a process of oxidation of gas to be introduced as an oxidized atmosphere is provided by freely selecting the quantity of hydrogen from zero to chemical equivalent for the fixed quantity of oxygen. CONSTITUTION:A fixed quantity of dry oxygen is supplied from an oxygen introducing pipe 1, the selected quantity of hydrogen of chemical equivalent component for oxygen is supplied from a hydrogen introducing pipe 2, the jetting hole of the introducing pipe is ignited, and hydrogen is reacted to oxygen. Subsequently, a current is applied to an electric heater 4, and the above is heated up to the prescribed temperature. An atmospheric control by stage from a dry oxygen atmosphere to a saturated vapor atmosphere can be performed by selecting the quantity of hydrogen from zero to chemical equivalent for a fixed quantity of oxygen. When the atmosphere and the temperature are maintained constant, the wafer 5 retained by a susceptor 6 is sent in from the open end. |
