| 摘要 |
PURPOSE:To obtain a high removing power of resist film as well as to prevent the damage and electrostatic breakdown of a wafer by a method wherein plasma density is increased by magnetic field, and the difference of mobility between electrons and atoms is reduced by the cycloid movement of electrons, thereby enabling to reduce the strength of electric field generating in the vicinity of the wafer. CONSTITUTION:The reaction gas such as O2 and the like is supplied into a vacuum chamber 20 from an introducing hole 21, the gas is exhausted from an exhaust hole 22, and the vacuum chamber 20 is maintained at the prescribed pressure. Then, excited plasma is generated in the vacuum chamber 20 by applying high frequency power on a high frequency coil 26. A wafer 23 is exposed to plasma in an electrically insulated condition, and an electric field is generated in the vicinity of the surface. On the surface of the wafer 23, field pressure 32 is generated vertical to the surface, and a magnetic field 33 is generated in parallel. Such ions 34 which are heavy in an electromagnetic field is made incident vertical to the surface of the wafer 23, but an electron performs a cycloid movement on the surface of the wafer 23. The difference of mobility for vertical direction is reduced, and the excessive electron 35 accumulated in the wafer 23 is reduced. As a result, the electric field generating in the vicinity of the wafer 23 is made weaker. |
