| 摘要 |
PURPOSE:To reduce the noises of a reading electric signal, and to improve resolving power by forming an opaque conductive layer on the side reverse to the optical incident side. CONSTITUTION:a-Si is formed on a glass substrate 21 in thickness of 1mum through a glow discharge decomposition method first in order to manufacture a photosensor array. Consequently, a photoconductive layer 22 consisting of a-Si containing hydrogen or a halogen element is shaped. Al is formed on the whole surface in thickness of 0.3mum through a vacuum evaporation method, and processed according to a pattern by using a positive type Az-1370 photo-resist and a phosphoric acid group etching liquid, and a common electrode layer 23 and separate electrode layers 24 are formed. Polyimide resin is superposed and applied on the layer 23 and the layers 24 five times through screen process printing, and cured at 350 deg.C to form an insulating layer 25 in thickness of 50mum. Cr is formed in thickness of 0.2mum through the vacuum evaporation method to shape an opaque conductive layer 26. The insulating layer 25 and the opaque conductive layer 26 are not formed to extracting sections for the common electrode layer 23 and the discrete electrode layers 24. |
