MOUNTING PROCESS OF SEMICONDUCTOR ELEMENT CHIP

摘要

PURPOSE:To provide the titled chip with thermal fatigue resistance and moisture resistance improving reliability thereof by a method wherein a gap between an Si chip and a substrate forming a wiring is filled with coating material composition and then whole body of the chip is coated with the same material with two step coating processes. CONSTITUTION:100vol% of a resin composition containing 100wt% of epoxyresin, 5-25wt% of polybutadien base polymer, 2-15wt% of dicyandiamide and 0.3-3.0wt% of coupling material is kneaded with a coating material composition containing 30-140vol% of quartz powder and finally mashed and kneaded under decompression to remove any mixed air from the coating material. Only one side of an Si chip 2 of a CCB junction test piece is coated 3 with said material at the level of the chip itself on a glass substrate to be heated at 120 deg.C for 5min. The gap between the chip and the substrate is perfectly filled with the coating material. Finally the whole body of the chip is coated with specified amount of the coating material into specified shape to retain the heat at 120 deg.C for 2hr finishing the hardening reaction.