| 摘要 |
PURPOSE:To stabilize longitudinal-mode oscillation by cutting one part of an N-InGaAsP active layer by an InP layer. CONSTITUTION:A U-groove is formed in the <011> direction of a (100)N-InP substrate 1, and a P-InP layer 2, an N-InP layer 3 and an N-InGaAsP layer 4 are grown. The layer 4 is removed selectively through striped etching in the <01-1> direction, and only the InP layer 3 is removed through etching. A first clad layer 6, an active layer 7, a second clad layer 8 and a cap layer 9 are shaped through second LPE growth. Accordingly, the active layer 7 has structure in which it is cut by the InP layer 3, and oscillating beams are reflected partially and transmitted partially by the N-InP layer 3. When the thickness of the InP layer 3 is kept within a range or 0.6mum-3.4mum, stable longitudinal-mode oscillation is obtained. |
